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2SD1163, 2SD1163A
Silicon NPN Triple Diffused
ADE-208-909 (Z) 1st. Edition September 2000 Application
TV horizontal deflection output
Outline
TO-220AB
1
23
1. Base 2. Collector (Flange) 3. Emitter
2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25C)
Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * Tj Tstg
1
2SD1163 300 120 6 7 10 20 40 150 -55 to +150
2SD1163A 350 150 6 7 10 20 40 150 -55 to +150
Unit V V V A A A W C C
Electrical Characteristics (Ta = 25C)
2SD1163 Item Collector cutoff current Symbol I CBO Min -- -- Collector to emitter breakdown voltage Emitter to base breakdown voltage V(BR)CEO V(BR)EBO 120 6 25 -- -- -- Typ -- -- -- -- -- -- -- -- Max 5 -- -- -- -- 2.0 1.2 0.5 2SD1163A Min -- -- 150 6 25 -- -- -- Typ -- -- -- -- -- -- -- -- Max -- 5 -- -- -- 1.0 1.2 0.5 V V s Unit mA mA V V Test conditions VCB = 300 V, IE = 0 VCB = 350 V, IE = 0 I C = 10 mA, RBE = I E = 10 mA, IC = 0 VCE = 5 V, IC = 5 A*1 I C = 5 A, IB = 0.5 A*1 I C = 5 A, IB = 0.5 A*1 I CP = 3.5 A, I B1 = 0.45 A
DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. VCE (sat) VBE (sat) tf
2SD1163, 2SD1163A
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 50 30 Collector current IC (A) 10 3 1.0 0.3 2SD1163 0.01 0 50 100 Case temperature TC (C) 150 10
Area of Safe Operation (40 V, 20 A)
ure ict rP Fo
40
20
(120 V, 0.9 A)
30 100 300 1,000 Collector to emitter voltage VCE (V)
Typical Output Characteristics 1.0 12 10 TC = 25C DC current transfer ratio hFE 8 6 4 2 mA IB = 0 0 6 8 10 2 4 Collector to emitter voltage VCE (V) 500
DC Current Transfer Ratio vs. Collector Current VCE = 5 V 200 100 50 20 10 5 0.1 TC = 75C 25C -25C
g cin Ar be Tu
(150 V, 0.5 A) 2SD1163A (350 V, 5 mA)
Collector current IC (A)
0.8
0.6
0.4
0.2
0.2
0.5 1.0 2 5 Collector current IC (A)
10
2SD1163, 2SD1163A
Collector to Emitter Saturation Voltage vs. Collector Current 3 IC/IB = 10 75C 2 Base to emitter saturation voltage VBE(sat) (V) 1.5 IC/IB= 10 Base to Emitter Saturation Voltage vs. Collector Current
Collector to emitter saturation voltage VCE(sat) (V)
1.0 TC = -25C 75C 0.5 25C
1 TC = -25C, 25C
0 0.1
0.2
0.5 1.0 2 5 Collector current IC (A)
10
0 0.1
0.2
0.5 1.0 2 5 Collector current IC (A)
10
2SD1163, 2SD1163A
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